Structure- and excitation-dependent photoluminescence of As–S:Yb3+ films

In the article, we present and discuss features of structure photoluminescence properties Yb-doped As–S films synthesized by PECVD employing solid-state initial precursors. The doping was carried out during deposition process. By controlling temperature precursor sources composition low-temperature nonequilibrium plasma, amorphous As–S:Yb with Yb content ranging from 0.6 to 8.4 at. %. change in ratio structural elements surface morphology as a function elemental is shown. increase leads redshift short-wavelength absorption edge. dependence shape intensity 2F5/2 → 2F7/2 photoluminescence, observed range 930–1030 nm on excitation wavelength (632.8 785 nm) concentration evaluated. relation between atomic matrix arsenic sulfide photoluminescent Yb3+ ions discussed.